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 Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
QIC0620003 200 Amp/600 Volts
Dual IGBT Common Emitter Module 200 Amp/600 Volts
Description:
Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy mounting with other components on a common heatsink.
QIC0620003 Dual IGBT Module Common Emitter 200 Amperes / 600 Volts
Features:
Isolated Mounting Isolation Material - DBC Alumina Low Drive Power Internal Series Gate Resistors Super-Fast FWD (110ns) Copper Baseplate 2500 V isolating voltage
Dimensions A B C D E F G H J K L
Inches 3.70 1.34 1.18 3.15 0.67 0.28 0.67 0.91 0.91 M6X1.0 DIA 0.256
Millimeters 94 34 30 80 17 6.99 17.1 23 23 M6X1.0 DIA. 6.5
Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
QIC0620003 200 Amp/600 Volts
Dual IGBT Common Emitter Module 200 Amp/600 Volts
Maximum Ratings, Tj=25C unless otherwise specified
Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Junction Temperature Storage Temperature Mounting Torque, M6 Terminal Screws Mounting Torque, M6 Mounting Screws Module Weight (Typical) V Isolation Symbol VCES VGES IC ICM IF IFM Tj Tstg VRMS QIC0620003 600 20 200 400* 50 500 -40 to 150 -40 to 125 40 40 200 2500 Units Volts Volts Amperes Amperes Amperes Amperes C C In-lb In-lb Grams Volts
*Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj=25C unless otherwise specified
Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) Test Conditions VCE=VCES VGE=0V VGE=VGES VCE=0V IC=20mA, VCE=10V IC=200A, VGE=15V IC=200A, VGE=15V, Tj=150C Total Gate Charge Diode Forward Voltage QG VFM VCC=300V, IC=200A, VGS=15V IF=50A, VGS=0V Min. 4.5 Typ. 6.0 2.1 2.15 600 Max. 1.0 0.5 7.5 2.8 2.8 Units mA A Volts Volts Volts nC Volts
Dynamic Electrical Characteristics, Tj=25C unless otherwise specified
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE1=VGE2=15V RG=3.1 IF=50A diF/dt=-100A/S Min. Typ. 0.37 Max. 20 7 4 200 550 300 300 110 Units nF nF ns ns ns ns ns ns C
Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Thermal Grease Applied Symbol RJC RJC RCF Test Conditions Per IGBT Per Diode Per Module Min. Typ. 0.14 0.70 Max. TBD TBD 0.075 Units C/W C/W C/W


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